ech8656 no.9010-1/7 features ? on-resistance r ds (on)1=13m (typ.) ? 1.8v drive ? halogen free compliance ? nch + nch mosfet ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 10 v drain current (dc) i d 7.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 40 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.3 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-001 80112 tkim/83111pe tkim tc-00002622 sanyo semiconductors data sheet ech8656 http:// semicon.sanyo.com/en/network product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection ordering number : EN9010A 8765 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view tl ech8656-tl-h tb lot no. n-channel silicon mosfet general-purpose switching device applications
ech8656 no.9010-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance | yfs | v ds =10v, i d =4a 7 s static drain-to-source on-state resistance r ds (on)1 i d =4a, v gs =4.5v 9 13 17 m r ds (on)2 i d =4a, v gs =4.0v 9.4 13.5 18 m r ds (on)3 i d =4a, v gs =3.1v 11 16 22 m r ds (on)4 i d =2a, v gs =2.5v 12.5 18 26 m r ds (on)5 i d =0.5a, v gs =1.8v 17 30 48 m input capacitance ciss v ds =10v, f=1mhz 1060 pf output capacitance coss 180 pf reverse transfer capacitance crss 135 pf turn-on delay time t d (on) see speci ed test circuit. 17.5 ns rise time t r 120 ns turn-off delay time t d (off) 68 ns fall time t f 80 ns total gate charge qg v ds =10v, v gs =4.5v, i d =7.5a 10.8 nc gate-to-source charge qgs 2.1 nc gate-to-drain ?miller? charge qgd 2.9 nc diode forward voltage v sd i s =7.5a, v gs =0v 0.74 1.2 v switching time test circuit ordering information device package shipping memo ech8656-tl-h ech8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =4a r l =2.5 v dd =10v v out v in 4v 0v v in ech8656
ech8656 no.9010-3/7 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a 0 it12484 0 0.5 1.0 1.5 2.0 2.5 1 4 7 2 5 8 3 6 9 10 v ds =10v --25 c ta=75 c 25 c 0 1.5 3.5 5.5 2.0 4.0 6.0 6.5 7.0 0.5 2.5 4.5 1.0 3.0 5.0 7.5 0 it16586 0.1 0.2 0.3 0.4 0.5 v gs =1.5v 2.0v 2.5v 4.0v 6.0v 8.0v 3.0v 1.8v gate-to-source voltage, v gs -- v r ds (on) -- v gs ambient temperature, ta -- c r ds (on) -- ta drain current, i d -- a sw time -- i d switching time, sw time -- ns ciss, coss, crss -- v ds drain current, i d -- a forward transfer admittance, | y fs | -- s | y fs | -- i d diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain-to-source voltage, v ds -- v ciss, coss, crss -- pf static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m 5 2 2 100 7 5 3 3 1000 7 0 0.1 0.2 0.3 0.4 0.5 0.6 1.0 0.9 0.8 0.7 it12487 it12488 0481216 2 6 10 14 18 20 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 it12490 0.1 2 2 1.0 7 5 3 10 7 5 3 0.1 2 0.01 57 23 1.0 2 57 3 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v ciss coss crss f=1mhz 10 57 3 10 7 5 3 100 7 5 3 2 10 1000 7 5 3 2 0.1 2 1.0 357 it12489 v dd =10v v gs =4v t d ( off) t r t f 10 23 57 t d (on) 0 it16587 26 4810 0 5 10 15 20 30 25 35 40 ta=25 c it16588 --75 --50 --25 0 25 50 75 100 125 150 175 0 10 20 30 40 5 15 25 35 v gs =2.5v, i d =2.0a v gs =4.5v, i d =4.0a v gs =4.0v, i d =4.0a v gs =3.1v, i d =4.0a i d =0.5a 4.0a 2.0a v gs =1.8v, i d =0.5a
ech8656 no.9010-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg 01234567891011 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it12491 v ds =10v i d =7.5a it16507 a s o drain-to-source voltage, v ds -- v drain current, i d -- a 0.01 0.1 1.0 10 23 57 23 57 23 57 23 5 100 7 0.01 0.1 1.0 10 100 7 5 7 5 3 2 7 5 3 2 7 5 3 2 3 2 i dp =40a (pw 10 s) i d =7.5a 100ms 1ms 10ms 100 s operation in this area is limited by r ds (on). dc operation ( ta=25 c ) ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit it16508 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 20 40 60 80 100 120 140 160 0 0.6 0.8 0.2 0.4 1.0 1.5 1.4 1.3 1.2 1.6 1unit when mounted on ceramic substrate (900mm 2 0.8mm) total dissipation
ech8656 no.9010-5/7 embossed taping speci cation ech8656-tl-h
ech8656 no.9010-6/7 outline drawing land pattern example ech8656-tl-h mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65
ech8656 ps no.9010-7/7 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. note on usage : since the ech8656 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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